浙江电力

2025, v.44;No.346(02) 110-123

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变压器绕组典型缺陷下漏磁特性及辨识方法研究
Research on magnetic flux leakage characteristics and identification methods under typical transformer winding defects

卢应强,胡忠忠,尚虎军,周湶
LU Yingqiang,HU Zhongzhong,SHANG Hujun,ZHOU Quan

摘要(Abstract):

现有研究对绕组缺陷下的漏磁规律分析不够全面,导致绕组缺陷检测难度大。通过建立110 kV变压器三维有限元仿真模型,并模拟实际的绕组缺陷,进行了不同位置和不同程度缺陷的漏磁仿真研究。结果表明:在绕组变形缺陷下,高低压绕组间的轴向漏磁变化较为显著,畸变范围也变大;在匝间短路缺陷下,短路绕组中电流的激增导致变压器内部漏磁分布发生畸变,高低压绕组间和高压绕组外侧的漏磁畸变均较为明显。通过对比试验测得的漏磁分布规律与有限元仿真结果,验证了有限元建模的准确性。进一步设计了基于有限元仿真模型的绕组缺陷检测判据,这些判据能够实现对绕组局部变形和少匝短路等缺陷的检测与判定。
Current research lacks a comprehensive analysis of magnetic flux leakage patterns caused by transformer winding defects, which complicates defect detection. To address this, A 3D finite element simulation model of a 110kV transformer was developed to simulate the winding defects. A study investigated magnetic flux leakage under different defect locations and severities. Results show that winding deformations cause significant axial magnetic flux leakage variations between high and low-voltage windings, with an expanded distortion range. In cases of inter-turn short-circuit defects, the surge in current within the short-circuited winding leads to noticeable distortions in the internal magnetic flux leakage, both between high and low-voltage windings and on the outer side of the high-voltage winding. A comparison between experimentally measured leakage distributions and the simulation results confirmed the accuracy of the finite element model. Additionally, detection criteria based on the simulation model were developed, allowing for the identification of localized winding deformations and few-turn short-circuit defects.

关键词(KeyWords): 变压器;绕组变形;匝间短路;漏磁分析;有限元仿真;绕组缺陷辨识
transformer;winding deformation;turn-to-turn short circuit;magnetic flux leakage analysis;finite element simulation;winding defect identification

Abstract:

Keywords:

基金项目(Foundation): 国家自然科学基金联合基金(U186660004);; 南瑞集团有限公司合作项目(0664-2160SUMEC9NR1045)

作者(Author): 卢应强,胡忠忠,尚虎军,周湶
LU Yingqiang,HU Zhongzhong,SHANG Hujun,ZHOU Quan

DOI: 10.19585/j.zjdl.202502011

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